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Al and C-MgB2 doping adds an electron to the system for each atom. This extra electron fills up the sigma-bands thus diminishing the number of sigma-carriers; this has been the usual explanation for the Tc reduction. Nevertheless in this work we show that there is also a large reduction of anisotropy in the electrical conductivity due to the sigma-carriers which should also have an effect on the Tc reduction. Al and C doping produce a different Tc pattern; this difference can be largely explained by the relative shift between the sigma-bands and pi-bands. After adjusting to this shift there is a small but visible difference, at low doping Tc in the Al compounds drops faster than in the C compounds, this can be directly related to the faster loss of conductivity anisotropy in the Al compounds.
Journal of Physics: Condensed Matter, 2006
The electrical conductivity anisotropy of the σ-bands is calculated for the (Mg,Sc)B 2 system using a virtual crystal model. Our results reveal that anisotropy drops with relatively little scandium content (< 30%); this behaviour coincides with the lowering of T c and the reduction of the Kohn anomaly. This anisotropy loss is also found in the Al and C doped systems. In this work it is argued that the anisotropy, or 2D-character, of the σ-bands is an important parameter for the understanding of the high T c found in MgB 2 .
Arxiv preprint cond-mat/ …, 2006
In this work the effect of Carbon and Aluminium doping on the multiband MgB 2 superconductor is analyzed. Using the rigid band and virtual crystal approximations (RBA and VCA), it was found that the main effect of doping on the band structure is band filling and a relative band-shift. If this band-shift is eliminated with an appropriate change of scale, then the RBA provides a good description of the band structure as function of doping. With this procedure both the inplane electrical conductivity of the Cand Al-doped MgB 2 and the superconducting critical temperature follow the same curve. The T c graph approximately follows the-band density of states; the differences between these two can be explained by loss of anisotropy which plays an important role in these systems.
Physical Review B, 2006
We present the anisotropic optical conductivity of MgB 2 between 0.1 and 3.7 eV at room temperature obtained on single crystals of different purity by spectroscopic ellipsometry and reflectance measurements. The bare ͑unscreened͒ plasma frequency p is almost isotropic and equal to 6.3 eV, which contrasts some earlier reports of a very small value of p . The data suggests that the bands are characterized by a stronger electron-phonon coupling tr but smaller impurity scattering ␥ imp , compared to the bands. The optical response along the boron planes is marked by an intense interband transition at 2.6 eV, due to which the reflectivity plasma edges along the a and c axes are shifted with respect to each other. As a result, the sample spectacularly changes color from a blueish-silver to the yellow as the polarization is rotated from the in-plane direction toward the c axis. The optical spectra are in good agreement with the published ab initio calculations. The remaining discrepancies can be explained by the relative shift of bands and bands by about 0.2 eV compared to the theoretical band structure, in agreement with the de Haas-van Alphen experiments. The widths of the Drude and the interband peaks are both very sensitive to the sample purity.
European Physical Journal B, 2002
We report measurements of the resistivity, ρ, and the Seebeck coefficient, S , of a MgB2 sintered sample, and compare S with theoretical calculations based on precise electronic structure calculations. ρ is fitted well by a generalized Bloch-Grüneisen equation with a Debye temperature Θ R of 1050 K. S is given by the sum of a diffusive and a phonon drag term and the behavior in the temperature region T c T R follows the relationship AT+BT3. The phonon drag term indicates a strong electron-phonon interaction. The diffusive term, compared with calculations, suggests that σ bands give the main contribution to the Seebeck effect.
Superconductor Science & Technology, 2003
We present resistivity and thermal conductivity measurements on bulk samples, prepared either by a standard method or by a one-step technique. The latter samples, due to their high density and purity, show residual resistivity values as low as 0.5 mW cm and thermal conductivity values as high as 215 W/mK, higher than the single crystal ones. Thermal and electrical data of all the samples are analysed in the framework of the Bloch-Gruneisen equation giving reliable parameter values. In particular the temperature resitivity coefficient, obtained both from resistivity and thermal conductivity, in the dirty sample comes out ten time larger than in the clean ones. This result supports the hypothesis of ref. [1] that p and s bands conduct in parallel, prevailing p conduction in clean samples and s conduction in dirty samples .
Physica C: Superconductivity, 2002
The local composition Mg:B of MgB 2 powder was systematically changed through annealing. Correlations were observed between the Mg loss and the lattice parameters a/c and the microstrain of MgB 2 . Direct wavelengthdispersive-spectrum and XRD measurements on ceramic samples with different residual resistivity ratios suggested that the transport property of MgB 2 might be affected by this Mg-deficiency, but oxygen-related defects may play a more important role.
Modern Physics Letters B, 2006
Measurements have been performed of the resistivity of the samples of MgB 2 , AlB 2 and AgB 2 . The samples show presence of impurities. Analyzing the data in terms of the impurity scattering, electron-phonon scattering, and weak localization it has been found that the AlB 2 (AgB 2 ) sample involves maximum (minimum) effect of the impurity, electron-phonon interaction and weak localization.
Journal of Physics: Condensed Matter, 2005
Based on the experimentally-found existence of two gaps in MgB 2 (one gap associated to the boron σ-states and the other to the boron π-states), the different contributions to the transport properties, electrical conductivity and Hall coefficient, were studied using the full potential-linearized augmented plane wave method and the generalized gradient approximation. MgB 2 doping was analyzed in the rigid band approximation. This permitted the study of the partial substitution of magnesium for aluminium (Mg 1-x Al x B 2 ) as well as other substitutions such as AB 2 (A=Be, Zr, Nb and Ta). The σ bands (boron σ-states), which are associated to the large superconducting gap, are very anisotropic at E F , while the π bands have very little anisotropic character. In (Mg 1-x Al x B 2 ) T c diminishes with Al content, the other compounds are not superconductors. In this work it was found that with electron doping, such as Al substitution, the σ-band conductivity decreases and the corresponding bands become less anisotropic. σ-band contribution for BeB 2 and ScB 2 at E F is very small and the anisotropy is much lower. For Zr, Nb and Ta there are no σ-bands at E F . These results give a connection between superconductivity and the character of the σband; band conductivity and band anisotropy. This gives a plausible explanation for the diminution of T c with different doping of MgB 2 .
We report for the first time a nonsubstitutional hole-doping of the MgB2 structure and an increase in Tc by SWCNT dilution. The SWCNT concentration was varied from 0.05wt% to 5wt%. We investigated the temperature dependence resistivity from 10K to 300K of sintered MgB2 powder containing dilute amount of ultra-high purity single wall carbon nanotubes. Micro-Raman spectroscopy, field emission scanning electron microscope and x-ray diffraction were used to analyze the interfacial interactions between the carbon nanotubes and the magnesium diboride grains. We obtained an increase in Tc from 41.1K to 45.8K. This is attributed charge transfer: electron transfer from the MgB2 structure to the SWCNT structure. This consequently leads to hole-doping of the MgB2 structure and the enhancement we see in Tc. This is confirmed by micro-Raman analysis of the phonon states of the SWCNT in the composites. This is explained in terms of the interplay between impurity scattering and hole-doping. This r...
Physical Review B, 2005
We report a de Haas-van Alphen (dHvA) study of the electronic structure of Al doped crystals of MgB2. We have measured crystals with ∼ 7.5% Al which have a Tc of 33.6 K, (∼ 14% lower than pure MgB2). dHvA frequencies for the σ tube orbits in the doped samples are lower than in pure MgB2, implying a 16 ± 2% reduction in the number of holes in this sheet of Fermi surface. The mass of the quasiparticles on the larger σ orbit is lighter than the pure case indicating a reduction in electron-phonon coupling constant λ. These observations are compared with band structure calculations, and found to be in excellent agreement.
Journal of Physics and Chemistry of Solids, 2004
We have investigated the effect of electron doping on the superconducting properties of MgB 2. For the purpose we have synthesized several samples along the Mg 12x Sc x B 2 section. The X-ray diffraction measurements reveal small changes in the lattice parameters suggesting that the Sc doping could be considered to simply fill the boron s bands. Radio frequency surface resistivity measurements has been used to obtain the variation of T c with Sc doping. Increasing the Sc content, the experimental T c diverges from the T c predicted by the BCS single band theory showing the key role of interchannel pairing near a shape resonance.
Journal of Superconductivity and Novel Magnetism, 2007
We present the results of point-contact spectroscopy (PCS) measurements in single-phase Mg1−x Alx B2 crystals and polycrystals with x up to 0.32, recently grown at ETH (Zurich) and University of Genova, respectively. The differential conductance curves of our “soft” point contacts were measured as a function of temperature from 4.2 K up to the Andreev critical temperature T c A , at which the normal-state conductance is recovered. The gap amplitudes, Δσ and Δπ , were obtained through a two-band BTK fit of the normalized conductance curves. The results extend previous data to the range of heavy Al doping and show that contrary to expectations, no gap merging is observed up to x=0.32 (i.e., down to T c A =9 K). The analysis of the gap trends within the two-band Eliashberg theory shows that band filling is the main effect of Al doping, even though a small increase in interband scattering might be necessary to account for the experimental data in single crystals.
Physical Review B, 2006
We report data on the thermal conductivity ͑T , H͒ along the basal plane of the hexagonal crystal structure of superconducting Mg 1−y Al y B 2 with y = 0.02 and 0.07 at temperatures between 0.5 and 50 K and in external magnetic fields between 0 and 70 kOe. The substitution of Al for Mg leads to a substantial reduction of the heat transport via electronic quasiparticles. The analysis of the ͑T , H͒ data implies that the Al impurities provoke an enhancement of the intraband scattering rate, almost equal in magnitude for both the and the bands of electronic excitations. This is in contrast with conclusions drawn from analogous data sets for material in which carbon replaces boron and where mainly the intraband scattering rate of the band is enhanced. Our complete data set, including additional results of measurements of the low-temperature thermal conductivity of pure MgB 2 , confirms the validity of the Wiedemann-Franz law for both pure and doped MgB 2 .
Journal of Physics and Chemistry of Solids, 2008
The thermoelectric power of C, Mn, C:Li, and Al:Li substituted MgB 2 single crystals has been investigated in the temperature range 10-300 K. Both the in-plane (S ab ) and the outof-plane (S c ) thermopowers are positive for the non-substituted crystal and both S ab and S c change a sign for crystals doped with electrons where C is substituted for B in the amount larger than 5 %at. When Li is substituted for Mg, the π band rather than the σ band is doped with holes and the doping effects are much more subtle. The anisotropy ratio of the nonsubstituted crystal S ab /S c ≈ 3 and this ratio is strongly reduced by the substitution of C.
Journal of Solid State Chemistry, 2002
By means of density functional theory the electronic structure of the MgB 2 superconductor was characterised and compared with that of the related iso-structural systems: AlB 2 , ZrB 2 , NbB 2 , and TaB 2 . Using the full-potential linearized augmented plane waves (FP-LAPW) method and the generalised gradient approximation, the electronic density distribution, density of states, and band structures were obtained for these compounds. The electrical conductivity, which cannot be easily measured in the c-direction, was calculated, in the relaxation time approximation using band structure results. It was found that the two-dimensional (2D) crystal structure character of these metallic diborides is also reflected in the electronic charge distribution. This 2D pattern is not completely seen in the electrical conductivity as it is, for instance, in the superconductor high Tc cuprates. Indeed, it was found that, by the electrical conductivity calculations, all these compounds have a bulk, yet anisotropic, conductivity.
IEEE Transactions on Applied Superconductivity, 2000
A comparative study of the electron transport properties of MgB 2 bulk samples was performed aimed at addressing the role of annealing as well as of SiC and Zn doping on sample anisotropy and band conduction parameters. Samples were produced by Reactive Mg Liquid Infiltration (RLI) technique in boron powder preforms. Both irreversibility ( ) and upper critical fields ( 2 ) are enhanced by doping procedure. In all samples the 2 anisotropy factor ( ), evaluated by analyzing the and 2 temperature dependence in the framework of the current percolation model proposed by Eisterer et al. [Phys. Rev. Lett. 90, 247002 (2003)], decreases at increasing temperature, and it is reduced by SiC and Zn doping-induced defects. Accordingly, in both annealed and doped samples the -band diffusivity, obtained by fitting the 2 dependence on temperature within the two-band model formulated by Gurevich [Phys. Rev. B 67, 184515 (2003)], is higher than the -band one. A decrease of the more anisotropic -band diffusivity was also found in the doped samples.
Physical Review B, 2005
In this Letter, the study of the effect of Al substitution on the upper critical field, Bc2, in AlxMg1-xB2 samples is presented. We find a straightforward correlation between Bc2 and the sigma-band gap, Delta_sigma, evaluated by point-contact measurements. Up to x=0.2 Bc2 can be well described within a clean limit model and its decrease with x is directly related to the suppression of Delta_sigma. For larger doping we observed the crossover to the dirty regime driven mostly by the strong decrease of Delta_sigma rather than by the increase of the sigma-band scattering rate
Physical Review B, 2003
We have examined polycrystalline MgB 2 by electron energy loss spectroscopy (EELS) and density of state calculations. In particular, we have studied two different crystal orientations, [110] and [001] with respect to the incident electron beam direction, and found significant changes in the near-edge fine-structure of the B K-edge. Density functional theory suggests that the pre-peak of the B K-edge core loss is composed of a mixture of p xy and p z hole states and we will show that these contributions can be distinguished only with an experimental energy resolution better than 0.5 eV. For conventional TEM/STEM instruments with an energy resolution of ~1.0 eV the pre-peak still contains valuable information about the local charge carrier concentration that can be probed by core-loss EELS. By considering the scattering momentum transfer for different crystal orientations, it is possible to analytically separate p xy and p z components from of the experimental spectra With careful experiments and analysis, EELS can be a unique tool measuring the superconducting properties of MgB 2 , doped with various elements for improved transport properties on a sub-nanometer scale. 74.70.Ad, 79.20 Uv, 31.15 Ew
Physica C: Superconductivity, 2007
We prepared a series of Mg 1-x (AlLi) x B 2 samples with 0≤x≤0.45 in order to compensate with Li the electron doping induced by Al. Structural characterization by means of neutron and X-ray diffraction confirms that Li enters the MgB 2 structure even though in an amount less than nominal one. We performed susceptibility, resistivity and specific heat measurements. Vibrational properties were also investigated by means of Raman spectroscopy. We compare these results with those obtained on a homologous series of Mg 1-x Al x B 2 samples. The systematic success of scaling the relevant properties with the Al content rather than with the electron doping suggests that lattice deformation plays an important role in tuning the superconducting properties.
Journal of Applied Physics, 2006
A series of polycrystalline bulk samples of Mg 1−2x ͑AgAl͒ x B 2 ͑0.0% ഛ x ഛ 1.0% ͒ has been synthesized by a solid state reaction method. The structure, Raman spectrum, and superconducting properties have been investigated by x-ray diffraction, Raman spectroscopy, and low-temperature resistivity measurements. It is found that the Ag, Al double doping causes the expansion of crystal lattice along the a-and c-axis orientations due to the substitution inducing ionic size variation. A redshift of peak position is observed in Raman spectra, which is ascribed to the crystal cell volume change inducing the variation of the phonon frequency. The superconducting transition temperature ͑T c ͒ is degressive with the doping level ͑x͒ increase. By the Ag and Al double doping, the hole concentration is kept to be unchanged in MgB 2 , which eliminates the effects of the charge carrier concentration change and band filling on T c . It is suggested that the reason of the T c suppression caused by the double doping is the co-operating results of the disorder effect and the chemical pressure effect induced by the chemical substitution.
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