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MgB2; Al and C doping, sigma-band filling and anisotropy reduction

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Abstract

Al and C-MgB2 doping adds an electron to the system for each atom. This extra electron fills up the sigma-bands thus diminishing the number of sigma-carriers; this has been the usual explanation for the Tc reduction. Nevertheless in this work we show that there is also a large reduction of anisotropy in the electrical conductivity due to the sigma-carriers which should also have an effect on the Tc reduction. Al and C doping produce a different Tc pattern; this difference can be largely explained by the relative shift between the sigma-bands and pi-bands. After adjusting to this shift there is a small but visible difference, at low doping Tc in the Al compounds drops faster than in the C compounds, this can be directly related to the faster loss of conductivity anisotropy in the Al compounds.